№2-2023

https://doi.org/10.53939/15605655/2023_2_6

Dikhanbayev K. K., Ikramova S. B., Myrzaly Ye.B., Zhaylybayev I.T., Torakhmet S.

Abstract: In this paper, we consider a silicon solar cell (SC) with an antireflection coating made of porous multicrystalline silicon, deposited by electrochemical anodization to the n-layer of the p-n-junction. The minimum of the reflection spectrum of porous μ-Si with an increase in the etching anodization current density shifts to the short-wavelength region, and also the grain boundaries of the surface of multicrystalline silicon are actively passivated by hydrogen bonds: SiH, SiH2 , SiH3. It is shown that the photosensitivity of μ-Si SC samples with porous μ-Si in the short-wavelength region in the range of 400-600 nm is higher due to low surface reflection in comparison with the initial sample. It is shown that the use of a modified etchant made
it possible to increase the plant efficiency of the SC from 13.5% to 16% due to the porosity of the layer. The output parameters of the obtained solar cell are shown.
Keywords: Silicon, multicrystalline, porosity, antireflection, passivation, current density, anodization, light transmission.

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